Abstract
Quantum well intermixing (QWI) of the facet regions of a semiconductor laser can significantly improve the COD of the device giving high kink power and high reliability. A novel epitaxy design incorporating a graded 'V-profile' layer allows for a reduced vertical far-field and simultaneously suppresses higher order modes to give high power operation. Furthermore, the 'V-profile' layer provides a robust design to improve the ridge etch tolerance to give excellent device performance uniformity across an array. Very large arrays of individually addressable lasers (up to 100 elements) are reported with small pitch size (∼100 urn), high single mode power (up to 300 mW) and high uniformity.
Original language | English |
---|---|
Article number | 06 |
Pages (from-to) | 33-39 |
Number of pages | 7 |
Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
Volume | 5738 |
DOIs | |
Publication status | Published - 1 Apr 2005 |
Externally published | Yes |
Event | Integrated Optoelectronic Devices 2005 - San Jose, United States Duration: 22 Jan 2005 → 27 Jan 2005 |
Keywords
- High power single mode lasers
- Laser arrays
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Atomic and Molecular Physics, and Optics
- Radiology Nuclear Medicine and imaging