Very large arrays of individually addressable, high power, single mode laser arrays in the 800-1000nm wavelength range obtained by quantum well intermixing techniques

S. P. Najda*, G. Bacchin, B. C. Qiu, C. J.M. Smith, O. Vassalli, M. Toury, S. D. McDougall, C. J. Hamilton, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Quantum well intermixing (QWI) of the facet regions of a semiconductor laser can significantly improve the COD of the device giving high kink power and high reliability. A novel epitaxy design incorporating a graded 'V-profile' layer allows for a reduced vertical far-field and simultaneously suppresses higher order modes to give high power operation. Furthermore, the 'V-profile' layer provides a robust design to improve the ridge etch tolerance to give excellent device performance uniformity across an array. Very large arrays of individually addressable lasers (up to 100 elements) are reported with small pitch size (∼100 urn), high single mode power (up to 300 mW) and high uniformity.

Original languageEnglish
Article number06
Pages (from-to)33-39
Number of pages7
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5738
DOIs
Publication statusPublished - 1 Apr 2005
Externally publishedYes
EventIntegrated Optoelectronic Devices 2005 - San Jose, United States
Duration: 22 Jan 200527 Jan 2005

Keywords

  • High power single mode lasers
  • Laser arrays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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