Abstract
MI-3 is a consortium of 11 universities and research laboratories whose mission is to develop complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) and to apply these sensors to a range of imaging challenges. A range of sensors has been developed: On-Pixel Intelligent CMOS (OPIC)—designed for in-pixel intelligence; FPN—designed to develop novel techniques for reducing fixed pattern noise; HDR—designed to develop novel techniques for increasing dynamic range; Vanilla/PEAPS—with digital and analogue modes and regions of interest, which has also been back-thinned; Large Area Sensor (LAS)—a novel, stitched LAS; and eLeNA—which develops a range of low noise pixels.
Original language | English |
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Pages (from-to) | 196-198 |
Number of pages | 3 |
Journal | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 604 |
Issue number | 1-2 |
Early online date | 5 Feb 2009 |
DOIs | |
Publication status | Published - Jun 2009 |
Keywords
- active pixel sensors
- metal-oxide semiconductor
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
- Atomic and Molecular Physics, and Optics
- Radiation
- Surfaces and Interfaces
- Electrical and Electronic Engineering