Novel architecture in Gate-All-Around (GAA) MOSFET with high-k dielectric for biomolecule detection

Krutideepa Bhol, Biswajit Jena, Umakanta Nanda, Shubham Tayal, Amit Kumar Jain

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this chapter, an investigative unique structure of reconfigurable nanowire-based GAA-MOSFET has been developed, which works as biosensor to notice biomolecules such as DNA, protein, cell, enzyme, etc. It performs as both n-type and p-type depending on the polarization of the applied biasing because of its reconfigurable behavior. Therefore, its extensive applications are found in the arena of programmable logic arrays (PLAs). The reconfigurable nanowire-based GAA-MOSFET is investigated here as a biosensor device with its splitting gates and a cavity for immobilization of biomolecules on a tinny layer of hafnium dioxide (HfO2) as an adhesive layer. For the immobilization of bio-species, an underlap section, also known as exposed cavity, is designed in the biosensor device through the etching of gate material and oxide material from the intermediate of channel. The electrostatic properties of the biosensor device get affected by covering of dissimilarity in the profile with potential and threshold voltage change when the biosensor device cooperates with the goals of the biocavity. All the investigative structure design and results attained here are verified with Synopsys Sentaurus TCAD (technology computer-aided design) simulation data to authenticate the accuracy of our purposed unique structure.
Original languageEnglish
Title of host publicationHigh-k Materials in Multi-Gate FET Devices
EditorsShubham Tayal, Parveen Singla, J. Paulo Davim
Place of PublicationBoca Raton
PublisherCRC Press
Pages131-139
Number of pages9
Edition1
ISBN (Electronic)9781003121589
DOIs
Publication statusPublished - 2021

Publication series

NameHigh-k Materials in Multi-Gate FET Devices

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