Nanometre scale reactive ion etching of GaN epilayers

D. Coquillat; S. K. Murad; A. Ribayrol; C. J.M. Smith; R. M. De La Rue; C. D.W. Wilkinson; O. Briot; R. L. Aulombard

doi:10.4028/www.scientific.net/msf.264-268.1403

Nanometre scale reactive ion etching of GaN epilayers

D. Coquillat^*, S. K. Murad, A. Ribayrol, C. J.M. Smith, R. M. De La Rue, C. D.W. Wilkinson, O. Briot, R. L. Aulombard

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiN_x. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl₄/HBr, CH₄/H₂, NH₃/CH₄/H₂ and CH₄/H₂/O₂. Patterns including pillars, holes and gratings with feature sizes ranging from 200 nm to 1 μm were produced. In a CH₄/H₂ plasma, quasi-vertical etching was achieved with sidewall angles greater than 81°.

Original language	English
Pages (from-to)	1403-1406
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.1403
Publication status	Published - 1 Feb 1998
Externally published	Yes

Keywords

CH
CHF
GaN
PMMA
Reactive Ion Etching
SiCl
SiN
Ti

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Documents and Links

10.4028/www.scientific.net/msf.264-268.1403

Cite this

@article{a313ec9656d1478092ccce972c34d653,

title = "Nanometre scale reactive ion etching of GaN epilayers",

abstract = "We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiNx. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl4/HBr, CH4/H2, NH3/CH4/H2 and CH4/H2/O2. Patterns including pillars, holes and gratings with feature sizes ranging from 200 nm to 1 μm were produced. In a CH4/H2 plasma, quasi-vertical etching was achieved with sidewall angles greater than 81°.",

keywords = "CH, CHF, GaN, PMMA, Reactive Ion Etching, SiCl, SiN, Ti",

author = "D. Coquillat and Murad, {S. K.} and A. Ribayrol and Smith, {C. J.M.} and {De La Rue}, {R. M.} and Wilkinson, {C. D.W.} and O. Briot and Aulombard, {R. L.}",

year = "1998",

month = feb,

day = "1",

doi = "10.4028/www.scientific.net/msf.264-268.1403",

language = "English",

volume = "264-268",

pages = "1403--1406",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "PART 2",

}

TY - JOUR

T1 - Nanometre scale reactive ion etching of GaN epilayers

AU - Coquillat, D.

AU - Murad, S. K.

AU - Ribayrol, A.

AU - Smith, C. J.M.

AU - De La Rue, R. M.

AU - Wilkinson, C. D.W.

AU - Briot, O.

AU - Aulombard, R. L.

PY - 1998/2/1

Y1 - 1998/2/1

N2 - We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiNx. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl4/HBr, CH4/H2, NH3/CH4/H2 and CH4/H2/O2. Patterns including pillars, holes and gratings with feature sizes ranging from 200 nm to 1 μm were produced. In a CH4/H2 plasma, quasi-vertical etching was achieved with sidewall angles greater than 81°.

AB - We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiNx. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl4/HBr, CH4/H2, NH3/CH4/H2 and CH4/H2/O2. Patterns including pillars, holes and gratings with feature sizes ranging from 200 nm to 1 μm were produced. In a CH4/H2 plasma, quasi-vertical etching was achieved with sidewall angles greater than 81°.

KW - CH

KW - CHF

KW - GaN

KW - PMMA

KW - Reactive Ion Etching

KW - SiCl

KW - SiN

KW - Ti

U2 - 10.4028/www.scientific.net/msf.264-268.1403

DO - 10.4028/www.scientific.net/msf.264-268.1403

M3 - Article

AN - SCOPUS:11644291066

SN - 0255-5476

VL - 264-268

SP - 1403

EP - 1406

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 2

ER -

Nanometre scale reactive ion etching of GaN epilayers

Abstract

Keywords

ASJC Scopus subject areas

Documents and Links

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