Franz–Keldysh effect in an optical waveguide containing a resonant tunneling diode

S G McMeekin; M R S Taylor; B Vogele; C R Stanley; C N Ironside

doi:10.1063/1.112130

Franz–Keldysh effect in an optical waveguide containing a resonant tunneling diode

S G McMeekin, M R S Taylor, B Vogele, C R Stanley, C N Ironside

SCEBE School Office

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Abstract

Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz–Keldysh band-edge shift produced by the electric field developed over a depletion region association with operation of the resonant tunneling diode. The effect has device potential for optical modulation at microwave frequencies.

Original language	Undefined/Unknown
Pages (from-to)	1076-1078
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112130
Publication status	Published - Aug 1994

Keywords

optical modulation
resonant tunneling diode
Franz–Keldysh effect

Documents and Links

10.1063/1.112130

Cite this

McMeekin, S. G., Taylor, M. R. S., Vogele, B., Stanley, C. R., & Ironside, C. N. (1994). Franz–Keldysh effect in an optical waveguide containing a resonant tunneling diode. Applied Physics Letters, 65(9), 1076-1078. https://doi.org/10.1063/1.112130

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abstract = "Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz–Keldysh band-edge shift produced by the electric field developed over a depletion region association with operation of the resonant tunneling diode. The effect has device potential for optical modulation at microwave frequencies.",

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AB - Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz–Keldysh band-edge shift produced by the electric field developed over a depletion region association with operation of the resonant tunneling diode. The effect has device potential for optical modulation at microwave frequencies.

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