Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents

Scott G. McMeekin, Max Robertson, Laurence McGheeb, John M. Winfield*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Hydrogen peroxide is an effective chemical polish for gallium arsenide in the pH range 6-8.5. The polished gallium arsenide surface has a surface roughness of < 1 nm and is superior to that obtained from polishing with dibromine-methanol solutions.

Original languageEnglish
Pages (from-to)367-368
Number of pages2
JournalJournal of Materials Chemistry
Volume2
Issue number3
DOIs
Publication statusPublished - 1992
Externally publishedYes

Keywords

  • Chemornechanical polishing
  • Gallium arsenide
  • Hydrogen peroxide

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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