Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem, Sajid Nazir, Nazar Abbas Saqib

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (¿= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.
    Original languageEnglish
    Title of host publicationSmart Photonic and Optoelectronic Integrated Circuits XVIII
    EditorsSailing He, El-Hang Lee, Louay A. Eldada
    PublisherSPIE
    Number of pages7
    Volume9751
    ISBN (Print)9781628419863
    DOIs
    Publication statusPublished - 3 Mar 2016

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume9751
    ISSN (Print)0277-786X

    Keywords

    • bandgap engineering
    • photo absorption
    • integration

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