Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem, Sajid Nazir, Nazar Abbas Saqib

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.
    © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
    Original languageEnglish
    Title of host publicationSmart Photonic and Optoelectronic Integrated Circuits XVIII
    EditorsSailing He, El-Hang Lee, Louay A. Eldada
    Number of pages7
    ISBN (Print)9781628419863
    Publication statusPublished - 3 Mar 2016

    Publication series

    NameProceedings of SPIE
    ISSN (Print)0277-786X


    • bandgap engineering
    • photo absorption
    • integration


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