Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem; Sajid Nazir; Nazar Abbas Saqib

doi:10.1117/12.2212311

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem, Sajid Nazir, Nazar Abbas Saqib

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Original language	English
Title of host publication	Smart Photonic and Optoelectronic Integrated Circuits XVIII
Editors	Sailing He, El-Hang Lee, Louay A. Eldada
Publisher	SPIE
Number of pages	7
Volume	9751
ISBN (Electronic)	9781628419863
ISBN (Print)	9781628419863
DOIs	https://doi.org/10.1117/12.2212311
Publication status	Published - 3 Mar 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9751
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Keywords

bandgap engineering
photo absorption
integration

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10.1117/12.2212311

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Kaleem, M., Nazir, S., & Abbas Saqib, N. (2016). Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects. In S. He, E.-H. Lee, & L. A. Eldada (Eds.), Smart Photonic and Optoelectronic Integrated Circuits XVIII (Vol. 9751). Article 97510E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9751). SPIE. https://doi.org/10.1117/12.2212311

@inproceedings{ee8dad2494444627ac8567e56196801d,

title = "Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.",

abstract = "Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.{\textcopyright} (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",

keywords = "bandgap engineering, photo absorption, integration",

author = "Muhammad Kaleem and Sajid Nazir and {Abbas Saqib}, Nazar",

year = "2016",

month = mar,

day = "3",

doi = "10.1117/12.2212311",

language = "English",

isbn = "9781628419863 ",

volume = "9751",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Sailing He and El-Hang Lee and Eldada, {Louay A.}",

booktitle = "Smart Photonic and Optoelectronic Integrated Circuits XVIII",

address = "United States",

}

Kaleem, M, Nazir, S & Abbas Saqib, N 2016, Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects. in S He, E-H Lee & LA Eldada (eds), Smart Photonic and Optoelectronic Integrated Circuits XVIII. vol. 9751, 97510E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9751, SPIE. https://doi.org/10.1117/12.2212311

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects. / Kaleem, Muhammad; Nazir, Sajid; Abbas Saqib, Nazar.
Smart Photonic and Optoelectronic Integrated Circuits XVIII. ed. / Sailing He; El-Hang Lee; Louay A. Eldada. Vol. 9751 SPIE, 2016. 97510E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9751).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

AU - Kaleem, Muhammad

AU - Nazir, Sajid

AU - Abbas Saqib, Nazar

PY - 2016/3/3

Y1 - 2016/3/3

N2 - Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

AB - Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

KW - bandgap engineering

KW - photo absorption

KW - integration

U2 - 10.1117/12.2212311

DO - 10.1117/12.2212311

M3 - Conference contribution

SN - 9781628419863

VL - 9751

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Smart Photonic and Optoelectronic Integrated Circuits XVIII

A2 - He, Sailing

A2 - Lee, El-Hang

A2 - Eldada, Louay A.

PB - SPIE

ER -

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

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