Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem; Sajid Nazir; Nazar Abbas Saqib

doi:10.1117/12.2212311

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.

Muhammad Kaleem, Sajid Nazir, Nazar Abbas Saqib

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (¿= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

Original language	English
Title of host publication	Smart Photonic and Optoelectronic Integrated Circuits XVIII
Editors	Sailing He, El-Hang Lee, Louay A. Eldada
Publisher	SPIE
Number of pages	7
Volume	9751
ISBN (Print)	9781628419863
DOIs	https://doi.org/10.1117/12.2212311
Publication status	Published - 3 Mar 2016

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	9751
ISSN (Print)	0277-786X

Keywords

bandgap engineering
photo absorption
integration

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10.1117/12.2212311

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title = "Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects.",

abstract = "Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (¿= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.",

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Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects. / Kaleem, Muhammad; Nazir, Sajid; Abbas Saqib, Nazar.

Smart Photonic and Optoelectronic Integrated Circuits XVIII. ed. / Sailing He; El-Hang Lee; Louay A. Eldada. Vol. 9751 SPIE, 2016. (Proceedings of SPIE; Vol. 9751).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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